In response to this phenomenon, Huake technicians conducted actual tests on a power station, through comparative analysis of different systems in the same area, through vertical and horizontal comparisons, using test and experimental methods and analysis.

Three major causes of solar panel PID phenomenon:

1. Reasons for system design: The lightning protection grounding of photovoltaic power plants is achieved by grounding the component frame at the edge of the square array, which results in the formation of a bias between a single component and the frame. The higher the bias voltage of the component, the PID phenomenon will occur. The more serious. For P-type crystalline silicon components, the negative grounding of the inverter with a transformer to eliminate the forward bias of the frame of the component relative to the cell will effectively prevent the occurrence of PID, but the negative grounding of the inverter will increase the corresponding system construction. cost;

2. Photovoltaic module reasons: the high temperature and high humidity external environment causes leakage current between the cell and the ground frame, and a leakage current channel is formed between the packaging material, the back plate, the glass, and the frame. Changing the insulating adhesive film ethylene vinyl acetate (EVA) is one of the ways to realize the anti-PID of the component. Under the condition of using different EVA encapsulating film, the anti-PID performance of the component will be different. In addition, the glass in solar panels is mainly soda lime glass, and the influence of glass on the PID phenomenon of photovoltaic modules is still unclear;

3. The reason of the battery chip: the uniformity of the block resistance of the battery chip, the thickness of the anti-reflection layer and the refractive index have different effects on the PID performance.

Among the above three aspects that cause the PID phenomenon, the PID phenomenon caused by the potential difference between the frame of the solar panel and the module is recognized by the industry, but the mechanism of the PID phenomenon in the module and the cell is not yet clear. The corresponding Measures to further improve the anti-PID performance of the components are still unclear.